Title :
A SiOx resistor load SRAM process for ASIC applications
Author :
Okumura, Toshiyuki ; Onishi, Shigeo ; Tanaka, Kenichi ; Sakiyama, Keizo
Author_Institution :
Sharp Corp., Nara, Japan
Abstract :
A silicon oxide film that has been heavily doped with phosphorus and silicon by ion implantation through a capping polysilicon layer has been studied for use as a high-resistance load device in a static random-access memory (SRAM). The fabrication process needs the addition of only one extra mask, for the ion implantation, in the standard CMOS process. The resistance per square micrometer is more than 1 TΩ under 5-V bias. The temperature dependence of this resistor is significantly improved in comparison with the lightly-doped polysilicon resistor which is widely used in SRAMs. An estimated breakdown lifetime in the actual working current density range is more than 100 years at temperatures up to 140°C
Keywords :
CMOS integrated circuits; insulating thin films; integrated memory circuits; ion implantation; random-access storage; silicon compounds; ASIC applications; SRAM process; SiOx resistor load; breakdown lifetime; capping polysilicon layer; high-resistance load device; ion implantation; mask; standard CMOS process; working current density range; CMOS process; Fabrication; Ion implantation; Life estimation; Lifetime estimation; Random access memory; Resistors; Semiconductor films; Silicon; Temperature dependence;
Conference_Titel :
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location :
Rochester, NY
DOI :
10.1109/CICC.1988.20935
