DocumentCode
3131027
Title
Mechanical stress measurements in damascene copper interconnects and influence on electromigration parameters
Author
Reimbold, G. ; Sicardy, O. ; Arnaud, L. ; Fillot, F. ; Torres, J.
Author_Institution
CEA-DRT-LETI, Grenoble, France
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
745
Lastpage
748
Abstract
This paper presents mechanical stress measurements versus temperature in advanced damascene copper lines with various geometries using synchrotron high flux X-rays. Elasto-plastic behaviour versus temperature is evidenced as well as temperature transitions between tensile and compressive stresses. We discuss the theoretical influence of /spl sigma/(T) on electromigration (EM), lifetime (MTF), and current design rule for the two degradation modes of voids and hillocks. We show that EM extrapolations should be reconsidered. While MTF defined by open failure is weakly affected by mechanical stress conditions, hillock mode failure would lead to a reduction of maximum current density design rule J/sub max/. The prospective impact of low k materials relative to mechanical stress is then addressed.
Keywords
X-ray diffraction; copper; current density; elastoplasticity; electromigration; failure analysis; integrated circuit interconnections; integrated circuit reliability; internal stresses; voids (solid); Cu; X-ray diffraction; compressive stresses; current design rule; damascene Cu interconnects; degradation modes; elasto-plastic behaviour; electromigration parameters; hillock mode failure; hillocks; interconnect reliability; internal stress effects; lifetime; low k materials; maximum current density design rule; mechanical stress measurements; open failure; synchrotron high flux X-rays; tensile stresses; voids; Compressive stress; Copper; Degradation; Electromigration; Geometry; Mechanical variables measurement; Stress measurement; Synchrotrons; Temperature measurement; X-rays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175945
Filename
1175945
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