Title :
Sub 5 ps SiGe bipolar technology
Author :
Bock, J. ; Schafer, H. ; Knapp, H. ; Zoschg, D. ; Aufinger, K. ; Wurzer, M. ; Boguth, S. ; Rest, M. ; Schreiter, R. ; Stengl, R. ; Meister, T.F.
Author_Institution :
Infineon Technol., Munich, Germany
Abstract :
A SiGe bipolar technology for mixed digital and analog RF applications is presented. Balanced device performance is achieved with a transit frequency f/sub T/ of 155 GHz at a collector emitter breakdown voltage BV/sub CEO/ of 1.9 V, a maximum oscillation frequency f/sub max/ of 167 GHz, and 4.7 ps ring oscillator gate delay. With a 99 GHz dynamic frequency divider and a 19 GHz LNA with 2.2 dB noise figure state-of-the-art results for high-speed digital and analog applications are demonstrated.
Keywords :
Ge-Si alloys; MMIC amplifiers; bipolar integrated circuits; delays; frequency dividers; high-speed integrated circuits; low-power electronics; mixed analogue-digital integrated circuits; radiofrequency integrated circuits; semiconductor device breakdown; semiconductor materials; 1.9 V; 155 GHz; 167 GHz; 19 GHz; 2.2 dB; 4.7 ps; 99 GHz; LNA; SiGe; balanced device performance; bipolar technology; collector emitter breakdown voltage; dynamic frequency divider; high-speed ICs; maximum oscillation frequency; mixed digital/analog RF applications; ring oscillator gate delay; transit frequency; Boron; Circuits; Delay; Doping profiles; Frequency conversion; Germanium silicon alloys; Noise figure; Ring oscillators; Silicon germanium; Thermal resistance;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175950
