Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

Author

Washio, K. ; Ohue, E. ; Hayami, R. ; Kodama, A. ; Shimamoto, H. ; Miura, M. ; Oda, K. ; Suzumura, I. ; Tominari, T. ; Hashimoto, Toshikazu

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

767

Lastpage

770

Abstract

A self-aligned selective-epitaxial-growth (SEG) SiGe HBT with a funnel-shape emitter electrode, which is structurally optimized for an emitter being scaled-down towards 100 nm, was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz.

Keywords

Ge-Si alloys; bipolar MIMIC; bipolar MMIC; delays; frequency dividers; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; vapour phase epitaxial growth; 100 nm; 4.9 ps; 81 GHz; ECL gate delay; HBT; SEG; SiGe; funnel-shape emitter electrode; high-speed performance; operating frequency; self-aligned selective-epitaxial-growth; ultra-high-speed static frequency divider; Delay; Electrodes; Frequency conversion; Germanium silicon alloys; Heterojunction bipolar transistors; Laboratories; Microwave transistors; Optical frequency conversion; Photonic integrated circuits; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175951

Filename

1175951