Author :
Heinemann, B. ; Rücker, H. ; Barth, R. ; Bauer, J. ; Bolze, D. ; Bugiel, E. ; Drews, J. ; Ehwald, K.E. ; Grabolla, T. ; Haak, U. ; Hoppner, W. ; Knoll, D. ; Krüger, D. ; Kuck, B. ; Kurps, R. ; Marschmeyer, M. ; Richter, H.H. ; Schley, P. ; Schmidt, D. ; S
Abstract :
We describe a novel collector design for high-frequency SiGe:C HBTs without deep trenches and with low-resistance collectors formed by high-dose ion implantation after shallow trench formation. f/sub T/ values of 200 GHz at BV/sub CEO/=2.0 V and ring oscillator delays of 4.3 ps are obtained. Excellent static characteristics and high yield were achieved for the HBT module integrated in a 0.25 /spl mu/m CMOS platform.
Keywords :
Ge-Si alloys; UHF bipolar transistors; carbon; delays; heterojunction bipolar transistors; ion implantation; microwave bipolar transistors; semiconductor materials; 0.25 micron; 2.0 V; 200 GHz; 4.3 ps; CMOS platform; SiGe:C; collector design; high-dose ion implantation; high-speed HBTs; low-resistance collectors; ring oscillator delays; static characteristics; yield; CMOS process; Delay; Fabrication; Heterojunction bipolar transistors; Implants; Ion implantation; Oxidation; Protection; Resistors; Ring oscillators;
