Title :
Noise performance of a low base resistance 200 GHz SiGe technology
Author :
Greenberg, D.R. ; Jagannathan, B. ; Sweeney, S. ; Freeman, G. ; Ahlgren, D.
Author_Institution :
IBM Microelectron. Semicond. Res. & Dev. Center (SRDC), Hopewell Junction, NY, USA
Abstract :
Emerging applications beyond 10 GHz will demand silicon technologies capable of achieving good noise performance out to high frequencies. In this work, we characterize for the first time noise in a 200 GHz SiGe technology out to 26 GHz, demonstrating the benefits of high f/sub T/ and low R/sub B/. We report 10, 20 and 26 GHz F/sub min/ in values of 0.4, 1.33 and 1.5 dB, respectively, with associated gains of 15, 11 and 9 dB. Further, we present the results of an experimental variant of the process with 31% lower RB and which further reduces F/sub min/ by up to 0.4 dB. Our results reveal the potential of 200 GHz SiGe for low noise operation out to high frequencies.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; bipolar MMIC; integrated circuit noise; semiconductor materials; system-on-chip; 0.4 to 1.5 dB; 10 to 26 GHz; 200 GHz; 9 to 15 dB; BiCMOS; SiGe; base resistance; bipolar-based processes; noise performance; system-on-a-chip applications; wireless design; Frequency; Germanium silicon alloys; Local area networks; Manufacturing; Microelectronics; Noise figure; Research and development; Semiconductor device noise; Silicon germanium; Space technology;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175956
