DocumentCode
3131264
Title
Integrated PIN photodiodes in high-performance BiCMOS technology
Author
Fortsch, Michael ; Zimmermann, Horst ; Einbrodt, Wolfgang ; Bach, Konrad ; Pless, Holger
Author_Institution
Inst. for Electr. Measurements & Circuit Design, Vienna Univ. of Technol., Austria
fYear
2002
fDate
8-11 Dec. 2002
Firstpage
801
Lastpage
804
Abstract
We attain a PIN photodiode combining high responsivity, fast response and low capacitance in BiCMOS technology. Only a slight process modification, having no verifiable influence on the transistor parameters is necessary. We achieve bandwidths of 625 MHz and 240 MHz at 670 and 780 nm as well as a quantum efficiency of 96.5%.
Keywords
BiCMOS integrated circuits; capacitance; integrated circuit technology; integrated optoelectronics; p-i-n photodiodes; 240 MHz; 625 MHz; 670 nm; 780 nm; 96.5 percent; fast response; high responsivity; high-performance BiCMOS technology; integrated PIN photodiodes; low capacitance; Anodes; Bandwidth; BiCMOS integrated circuits; Capacitance; Cathodes; Doping; Epitaxial layers; Integrated circuit technology; PIN photodiodes; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location
San Francisco, CA, USA
Print_ISBN
0-7803-7462-2
Type
conf
DOI
10.1109/IEDM.2002.1175959
Filename
1175959
Link To Document