Title :
Trends in CMOS image sensor technology and design
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
Abstract :
Three trends that promise to increase CMOS image sensor system performance are presented: (i) modifications of deep submicron CMOS processes to improve their imaging characteristics, (ii) developments that take advantage of these modified deep submicron processes, and (iii) high frame rate sensors and applications to still and video imaging, specifically to extending sensor dynamic range. Recent research on Digital Pixel Sensors and applications of its high frame rate to still and video imaging are discussed.
Keywords :
CMOS image sensors; integrated circuit technology; photodetectors; CMOS image sensor technology; deep submicron CMOS processes; digital pixel sensors; high frame rate sensors; image sensor system performance; imaging characteristics; sensor dynamic range; still imaging; triple-well photodetector; video imaging; CMOS image sensors; CMOS process; CMOS technology; Dark current; Diodes; Dynamic range; Optical imaging; Pixel; Sensor phenomena and characterization; Sensor systems and applications;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175960
