DocumentCode
3131325
Title
A low power, high performance, phone headset amplifier in CMOS technology
Author
Negahban-Hagh, Mehrdad ; Stolaruk, Randy ; Kraz, Vladimir
Author_Institution
Silicon Syst. Inc., Tustin, CA, USA
fYear
1988
fDate
16-19 May 1988
Abstract
A description is given of the implementation of a low-power, high-performance telephone headset amplifier, using switched-capacitor techniques. Total power consumption is 3.5 mW with a single 5-V supply. Output noise level of -95 dBV has been achieved in both its receiver and transmitter channels. With a single 5-V supply the average area and power consumption per pole of filtering is 510 square mils and 120 μW, respectively
Keywords
CMOS integrated circuits; amplifiers; switched capacitor networks; telephone sets; 120 muW; 3.5 mW; 5 V; CMOS technology; area; filtering; noise level; phone headset amplifier; power consumption; switched-capacitor techniques; telephone headset; transmitter channels; Active filters; Bandwidth; CMOS technology; Capacitors; Energy consumption; High power amplifiers; Operational amplifiers; Preamplifiers; Switches; Transmitters;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 1988., Proceedings of the IEEE 1988
Conference_Location
Rochester, NY
Type
conf
DOI
10.1109/CICC.1988.20937
Filename
20937
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