Title :
Effects of nitrogen in HfSiON gate dielectric on the electrical and thermal characteristics
Author :
Koyama, Masanori ; Kaneko, A. ; Ino, T. ; Koike, M. ; Kamata, Y. ; Iijima, R. ; Kamimuta, Y. ; Takashima, A. ; Suzuki, M. ; Hongo, C. ; Inumiya, S. ; Takayanagi, M. ; Nishiyama, A.
Author_Institution :
Adv. LSI Technol. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The effects of the nitrogen in the HfSiON gate dielectric on the electrical and thermal properties of the dielectric were investigated. It is clearly demonstrated that nitrogen enhances the dielectric constant of silicates. High dielectric constants of the HfSiON are maintained and boron penetration is substantially suppressed in the HfSiON during high temperature annealing. These properties are ascribed to the homogeneity of the bond structure in the film containing nitrogen through high temperature annealing.
Keywords :
MOS capacitors; annealing; bonds (chemical); dielectric thin films; hafnium compounds; nitrogen; permittivity; silicon compounds; sputtered coatings; thermal stability; 1000 C; Au-HfSiON-Si; Au/HfSiON/p-Si capacitors; HfSiON gate dielectric; Si-HfSiON-Si; bond structure homogeneity; boron penetration suppression; co-sputtering; dielectric constant enhancement; electrical characteristics; high temperature annealing; nitrogen effects; poly-Si/HfSiON/Si stack; thermal characteristics; thermal stability; Annealing; Bonding; Boron; Dielectric constant; High K dielectric materials; High-K gate dielectrics; Nitrogen; Polarization; Temperature; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175970
