Title :
Thermally stable CVD HfO/sub x/N/sub y/ advanced gate dielectrics with poly-Si gate electrode
Author :
Choi, C.H. ; Rhee, S.J. ; Jeon, T.S. ; Lu, N. ; Sim, J.H. ; Clark, R. ; Niwa, M. ; Kwong, D.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
Abstract :
In this paper, for the first time, we report high quality CVD hafnium oxynitride (HfOxNy) MOSFETs with conventional self-aligned poly-Si gate. These CVD HfOxNy films deposited using TDEAH (Tetrakisdiethylamino hafnium, C/sub 16/H/sub 40/N/sub 4/Hf) and NH/sub 3/ remain amorphous after 900/spl sim/950/spl deg/C annealing. Compared to HfO/sub 2/, HfOxNy exhibits reduced leakage current by 2/spl sim/3 orders of magnitude, excellent boron penetration immunity, superior thermal stability of both EOT and leakage current after high temperature annealing, and excellent reliability.
Keywords :
CVD coatings; MOSFET; annealing; dielectric thin films; hafnium compounds; leakage currents; thermal stability; 900 to 950 degC; HfO/sub x/N/sub y/ CVD film; HfON; MOSFET; Si; boron penetration; equivalent oxide thickness; high temperature annealing; high-K gate dielectric; leakage current; reliability; self-aligned poly-Si gate electrode; thermal stability; Annealing; Boron; Crystallization; Dielectrics; Electrodes; Hafnium oxide; MOSFETs; Nitrogen; Temperature; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175972
