Title :
Nitrogen concentration effects and performance improvement of MOSFETs using thermally stable HfO/sub x/N/sub y/ gate dielectrics
Author :
Chang Seok Kang ; Cho, H.-J. ; Onishi, K. ; Choi, R. ; Kim, Y.H. ; Nieh, R. ; Han, J. ; Krishnan, S. ; Shahriar, A. ; Lee, J.C.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
The effects of nitrogen concentration on the material and electrical properties of HfO/sub x/N/sub y/ gate dielectrics were investigated. Higher concentration of nitrogen provides better thermal stability while sacrificing mobility. However, with high temperature forming gas (F/G) anneal, HfO/sub x/N/sub y/ showed improved peak mobility (/spl sim/250 cm/sup 2//eV) as well as superior thermal stability.
Keywords :
MOSFET; annealing; carrier mobility; dielectric thin films; diffusion; hafnium compounds; nitridation; thermal stability; HfO/sub x/N/sub y/; MOSFETs; high temperature forming gas anneal; impurity diffusion; nitridation; nitrogen concentration; peak mobility; thermally stable gate dielectrics; Annealing; Boron; Degradation; Hafnium oxide; High-K gate dielectrics; MOSFETs; Metallization; Nitrogen; Sputtering; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175974
