Title :
W-band GaN MMIC with 842 mW output power at 88 GHz
Author :
Micovic, M. ; Kurdoghlian, A. ; Shinohara, K. ; Milosavljevic, I. ; Burnham, S.D. ; Hu, Minglie ; Corrion, A.L. ; Wong, William S. ; Schmitz, A. ; Hashimoto, P.B. ; Willadsen, P.J. ; Chow, D.H. ; Fung, Andy ; Lin, R.H. ; Samoska, Lorene ; Kangaslahti, Pek
Author_Institution :
HRL Laboratories, Malibu, United States
Abstract :
We report W-band GaN MMIC´s that produce 96% more power at a frequency of 88 GHz in continuous wave (CW) operation than the highest power reported in this frequency band for the best competing solid state technology[1], the InP HEMT. W-band power module containing a single three stage GaN MMIC chip with 600 µm wide output stage produced over 842 mW of output power in CW-mode, with associated PAE of 14.7% and associated power gain of 9.3 dB. This performance was measured at MMIC drain bias of 14 V.
Keywords :
Frequency; Gain; Gallium nitride; HEMTs; Indium phosphide; MMICs; Multichip modules; Power generation; Semiconductor device measurement; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2010.5516955
