Title :
Spin light emitting diode with CoFeB/MgO spin injector
Author :
Lu, Y. ; Liang, S. ; Zhang, T. ; Barate, P. ; Frougier, J. ; Renucci, P. ; Xu, B. ; Jaffres, H.Y. ; George, J. ; Devaux, X. ; Hehn, M. ; Marie, X. ; Mangin, S. ; Amand, T. ; Han, X. ; Wang, Z.
Author_Institution :
Dept. Phys. de la Mater. et des Mater., Inst. Jean Lamour, Vandoeuvre-les-Nancy, France
Abstract :
Binary information encoded within the spin of carriers can be transferred into corresponding right or left-handed circularly polarized photons emitted from an active semiconductor medium via carrier-photon angular momentum conversion. In order to attain maximized spin-injection at out-of-plane magnetic remanence, a number of material systems have been explored as possible solid-state spin injectors. However the electroluminescence circular polarization (PC) of emitted light was still limited at 3-4% at remanence.
Keywords :
boron alloys; cobalt alloys; electroluminescence; iron alloys; light emitting diodes; magnesium compounds; magnetoelectronics; remanence; spin polarised transport; CoFeB-MgO; active semiconductor medium; carrier-photon angular momentum conversion; electroluminescence circular polarization; emitted light; left-handed circularly polarized photons; out-of-plane magnetic remanence; right-handed circularly polarized photons; solid-state spin injectors; spin light emitting diode; Annealing; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Molecular beam epitaxial growth; Physics; Spin polarized transport;
Conference_Titel :
Magnetics Conference (INTERMAG), 2015 IEEE
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7321-7
DOI :
10.1109/INTMAG.2015.7157058
