A MEMS variable capacitor with piezoresistive position sensing fabricated in a standard 0.35 µm CMOS process

Author

Zahirovic, Nino ; Mansour, Raafat R. ; Yu, Ming

Author_Institution

Univ. of Waterloo, Waterloo, ON, Canada

fYear

2010

fDate

23-28 May 2010

Firstpage

1154

Lastpage

1157

Abstract

A variable MEMS capacitor with piezoresistive feedback is presented. The capacitor is fabricated in a commercial 0.35 μm CMOS process with MEMS post-processing. The work presented demonstrates a piezoresistive sensing scheme capable of controlling hysteresis effects in a CMOS-MEMS variable capacitor. Potential applications of the sensing scheme include closed-loop control of variable capacitors and detection of dielectic charging.

Keywords

CMOS integrated circuits; capacitors; micromechanical devices; piezoresistive devices; CMOS process; MEMS variable capacitor; closed-loop control; dielectic charging; hysteresis effect; piezoresistive position sensing; size 0.35 micron; CMOS process; Capacitance; Capacitors; Electric variables control; Electrostatic actuators; Hysteresis; Micromechanical devices; Piezoresistance; Radiofrequency microelectromechanical systems; Resistors; RF MEMS; Varactors; hysteresis; piezoresistive devices; tunable circuits and devices; variable capacitors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International

Conference_Location

Anaheim, CA

ISSN

0149-645X

Print_ISBN

978-1-4244-6056-4

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2010.5516967

Filename

5516967