Title :
A 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size using 90 nm flash technology
Author :
Dong-Chan Kim ; Wang-Chul Shin ; Jae-Duk Lee ; Jin-Hyun Shin ; Joon-Hee Lee ; Sung-Hoi Hur ; Ihn-Gee Baik ; Yoo-Choel Shin ; Chang-Hyun Lee ; Jae-Sun Yoon ; Heon-Guk Lee ; Kwon-Soon Jo ; Seung-Wook Choi ; Byung-Kwan You ; Jeong-Hyuk Choi ; Donggun Park ;
Author_Institution :
Adv. Technol. Dev., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
A manufacturable 2 Gb NAND flash memory with 0.044 /spl mu/m/sup 2/ cell size, which is the smallest cell size ever reported in semiconductor memory, is successfully developed with 90 nm NAND flash technology for high density file storage application. The three main key technology features of 90 nm NAND flash technology are advanced KrF lithography with off-axis illumination system equipped with a dipole aperture, reduced stack height of cell, and optimized gate reoxidation affecting tunnel oxide profile.
Keywords :
NAND circuits; cellular arrays; circuit optimisation; flash memories; ultraviolet lithography; 2 Gbit; 90 nm; KrF; NAND flash memory; advanced KrF lithography; cell size; dipole aperture; flash technology; high density file storage; optimized gate reoxidation; photolithography; semiconductor memory; stack height; tunnel oxide profile; Apertures; Digital audio players; Digital cameras; Flash memory; Lighting; Lithography; Nonvolatile memory; Resists; Semiconductor device manufacture; Semiconductor memory;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175986
