An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase

Author

Swift, C.T. ; Chindalore, G.L. ; Harber, K. ; Harp, T.S. ; Hoefler, A. ; Hong, C.M. ; Ingersoll, P.A. ; Li, C.B. ; Prinz, E.J. ; Yater, J.A.

Author_Institution

Embedded Memory Center, Motorola Inc., Austin, TX, USA

fYear

2002

fDate

8-11 Dec. 2002

Firstpage

927

Lastpage

930

Abstract

In this work, a new compact SONOS Flash EEPROM device with fast programming, high reliability, and uniform erase is demonstrated. This device has been embedded into a 90 nm high performance CMOS logic process with an advanced copper backend. This device utilizes hot electron injection for programming and uniform channel tunneling for erase. Uniform tunnel erase prevents residual electron build up over the channel and avoids the reliability concerns of hot hole erase. A single bit is stored in each nonvolatile memory transistor.

Keywords

CMOS memory circuits; flash memories; hot carriers; integrated circuit reliability; tunnelling; 90 nm; CMOS logic process; Cu; copper backend; embedded SONOS nonvolatile memory; flash EEPROM; hot electron programming; reliability; uniform tunnel erase; CMOS logic circuits; CMOS process; Copper; EPROM; Logic devices; Logic programming; Nonvolatile memory; SONOS devices; Secondary generated hot electron injection; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2002. IEDM '02. International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-7462-2

Type

conf

DOI

10.1109/IEDM.2002.1175988

Filename

1175988