Title :
An embedded 90 nm SONOS nonvolatile memory utilizing hot electron programming and uniform tunnel erase
Author :
Swift, C.T. ; Chindalore, G.L. ; Harber, K. ; Harp, T.S. ; Hoefler, A. ; Hong, C.M. ; Ingersoll, P.A. ; Li, C.B. ; Prinz, E.J. ; Yater, J.A.
Author_Institution :
Embedded Memory Center, Motorola Inc., Austin, TX, USA
Abstract :
In this work, a new compact SONOS Flash EEPROM device with fast programming, high reliability, and uniform erase is demonstrated. This device has been embedded into a 90 nm high performance CMOS logic process with an advanced copper backend. This device utilizes hot electron injection for programming and uniform channel tunneling for erase. Uniform tunnel erase prevents residual electron build up over the channel and avoids the reliability concerns of hot hole erase. A single bit is stored in each nonvolatile memory transistor.
Keywords :
CMOS memory circuits; flash memories; hot carriers; integrated circuit reliability; tunnelling; 90 nm; CMOS logic process; Cu; copper backend; embedded SONOS nonvolatile memory; flash EEPROM; hot electron programming; reliability; uniform tunnel erase; CMOS logic circuits; CMOS process; Copper; EPROM; Logic devices; Logic programming; Nonvolatile memory; SONOS devices; Secondary generated hot electron injection; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175988
