Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

Author

Ruzyllo, J. ; Lee, D.-O. ; Roman, P. ; Horn, M. ; Mumbauer, P. ; Brubaker, M. ; Grant, R.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

2001

fDate

2001

Firstpage

71

Lastpage

75

Abstract

This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (liquid source misted chemical deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied, mist-deposited oxides of Hf and Zr as well as SrTa₂O₆ were found to display promising characteristics for MOS gate applications, with the last showing superior thermal stability with silicon

Keywords

CMOS integrated circuits; MOSFET; cluster tools; dielectric thin films; integrated circuit interconnections; integrated circuit metallisation; liquid phase deposition; oxidation; permittivity; thermal stability; HfO; LSMCD; LSMCD flexibility; MOS gate applications; MOS gate structures; SrTa₂O₆; ZrO; cluster tool; electrical characteristics; film quality; fundamental material properties; high-k dielectrics; high-k metal oxides; liquid source misted chemical deposition; metal oxide films; mist-deposited Hf oxides; mist-deposited Zr oxides; process chemistries; silicon; thermal stability; Chemicals; Chemistry; Dielectric liquids; Displays; Electric variables; Hafnium; High K dielectric materials; High-K gate dielectrics; Material properties; Zirconium;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI

Conference_Location

Munich

ISSN

1078-8743

Print_ISBN

0-7803-6555-0

Type

conf

DOI

10.1109/ASMC.2001.925619

Filename

925619