Title :
High-capacitance Cu/Ta2O5/Cu MIM structure for SoC applications featuring a single-mask add-on process
Author :
Ishikawa, Tsuyoshi ; Kodama, Daisuke ; Matsui, Yuichi ; Hiratani, Masahiko ; Furusawa, Takeshi ; Hisamoto, Digh
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
This paper presents a metal-insulator-metal capacitor for SoC applications which has the highest capacitance density (up to 12 fF//spl mu/m/sup 2/) ever reported for a device in this field. The simple MIM structure allowed development of the process as a single-mask add-on to conventional Cu BEOL processing.
Keywords :
MIM structures; capacitors; copper; masks; system-on-chip; tantalum compounds; Cu BEOL processing; Cu-Ta/sub 2/O/sub 5/-Cu; Cu/Ta/sub 2/O/sub 5//Cu MIM structure; SoC application; capacitance density; metal-insulator-metal capacitor; single-mask add-on process; Capacitance; Electrodes; Electromagnetic heating; Laboratories; Lead; Leakage current; MIM capacitors; Metal-insulator structures; Microwave devices; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 2002. IEDM '02. International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-7462-2
DOI :
10.1109/IEDM.2002.1175991
