DocumentCode :
3132019
Title :
Thermal simulation and design of GaAs HBTs
Author :
Hsu, Chung-Yen ; Kuo, Sheng-Liang ; Liu, Chun-Kai ; Chao, Yu-Lin ; Dai, Ming-Ji ; Wang, Y.C. ; Lin, C.K. ; Wang, W.K. ; Li, S.J. ; Chen, Jericho
Author_Institution :
Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2009
fDate :
21-23 Oct. 2009
Firstpage :
585
Lastpage :
588
Abstract :
GaAs based hetero-junction bipolar transistors (HBTs) offer high speed and good device matching characteristics that are attractive for many high-speed circuits. However, thermal behaviors with multi-fingers can significantly affect HBTs performance. In this paper, three dimensional (3-D) finite-element modeling (FEM) approaches are built up to analyze the maximum temperature region and temperature distribution of GaAs based HBTs devices. The thermal performance for two different types of unit cell including the standard cell and emitter thermal shunt cell were simulated and compared. As a result of generated heat from emitter fingers transfers to the substrate through the metal bridge, unit cell with emitter thermal shunt reduced the junction temperature significantly. The thermal effects of metal bridge thickness and various substrate thermal conductivity values are also discussed.
Keywords :
III-V semiconductors; finite element analysis; gallium arsenide; heterojunction bipolar transistors; semiconductor device models; thermal conductivity; 3D finite element modeling; GaAs; heterojunction bipolar transistors; high-speed circuits; metal bridge thickness; temperature distribution; thermal conductivity; thermal simulation; Bipolar transistors; Bridge circuits; Chaos; Fingers; Finite element methods; Gallium arsenide; Paper technology; Substrates; Temperature distribution; Thermal conductivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
Conference_Location :
Taipei
Print_ISBN :
978-1-4244-4341-3
Electronic_ISBN :
978-1-4244-4342-0
Type :
conf
DOI :
10.1109/IMPACT.2009.5382252
Filename :
5382252
Link To Document :
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