Long throw and i-PVD liners for W-plug contact and via applications

Author

Burgess, S.R. ; Buchanan, K.E. ; Butler, D.C. ; Urbansky, Norbert ; Schmidbauer, Sven

Author_Institution

Trikon Technol., Newport, UK

fYear

2001

fDate

2001

Firstpage

97

Lastpage

100

Abstract

Results are presented for long throw and ionized PVD layers for W-plug liner applications. 245 mm and 430 mm long throw modules are discussed, the latter being shown to be applicable to sub-0.17 μm contacts when combined with very low process pressures. Data is presented showing that stable contacts can be produced without the damage risks associated with high energy ionized PVD processes. For metal applications above contact, a novel PVD module is shown to have particular benefits at via level. Chain data is presented showing >15% reduction in via resistance compared to any combination of i-PVD/long throw Ti/TiN sequences

Keywords

chemical interdiffusion; diffusion barriers; electric resistance; integrated circuit interconnections; integrated circuit metallisation; integrated circuit yield; modules; sputter deposition; stability; titanium; titanium compounds; tungsten; 0.17 micron; 245 mm; 430 mm; PVD module; W-Ti-TiN; W-plug contact applications; W-plug liner applications; W-plug via applications; damage risks; high energy ionized PVD processes; i-PVD liners; i-PVD/long throw Ti/TiN sequences; ionized PVD layers; long throw PVD layers; long throw PVD liners; long throw modules; metal applications; process pressure; stable contacts; via resistance; Atherosclerosis; Collimators; Contact resistance; Costs; Integrated circuit interconnections; Manufacturing processes; Particle production; Random access memory; Substrates; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI

Conference_Location

Munich

ISSN

1078-8743

Print_ISBN

0-7803-6555-0

Type

conf

DOI

10.1109/ASMC.2001.925625

Filename

925625