Title :
Enhanced self aligned contact (SAC) etch stop window by using C4F6 chemistry
Author :
Wang, Ruiping ; Pu, Bryan ; Bjokman, Claes ; Komatsu, Takehiko ; Woo, JW ; Ruiping Wang ; Shan, Hongching
Author_Institution :
Appl. Mater., Sunnyvale, CA, USA
Abstract :
A self-aligned contact (SAC) process with C4F6 based chemistry has been developed for device technologies of 0.13 μm and beyond using eMax-an advanced dielectric etch system utilizing MERIE technology. Higher nitride selectivity and a wider etch stop window have been achieved. The new SAC process is capable of etching both low and high aspect ratio SAC structures with up to 30:1 nitride corner selectivity, greater than 87° profile, with up to 6500 A/min etch rate. Process trends versus key parameters have been characterized and CO addition effects on nitride selectivity and profile were also evaluated. A stable process performance has been demonstrated with an extended run of 122 RF hours and more than 5288 wafers
Keywords :
dielectric thin films; electrical contacts; integrated circuit interconnections; integrated circuit metallisation; organic compounds; plasma materials processing; sputter etching; surface chemistry; surface topography; 0.13 micron; 122 hr; C4F6 based chemistry; CO; CO addition effects; MERIE technology; SAC process; Si3N4; device technologies; eMax dielectric etch system; enhanced self aligned contact etch stop window; etch profile; etch rate; etch stop window; fluorocarbon chemistry; hexafluorobutine; high aspect ratio SAC structures; low aspect ratio SAC structures; nitride corner selectivity; nitride selectivity; stable process performance; Argon; Chemical technology; Chemistry; Dielectric devices; Dielectric materials; Etching; Inductors; Polymers; Production; Temperature dependence;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference, 2001 IEEE/SEMI
Conference_Location :
Munich
Print_ISBN :
0-7803-6555-0
DOI :
10.1109/ASMC.2001.925626
