Four-wavelength DBR laser array with waveguide-couplers fabricated using selective MOVPE growth

Author

Katoh, Y. ; Kunii, T. ; Matsui, Y. ; Kamijoh, T.

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

26

Lastpage

28

Abstract

We developed integrated multiwavelength lasers with waveguide couplers using a novel selective metalorganic vapor-phase epitaxy (MOVPE) technique. The lasing wavelength was controlled by modulating the effective refractive index of distributed Bragg reflector (DBR) waveguides. Array lasing wavelengths were distributed from 1548.0 to 1553.5 nm with an average spacing of 1.8 nm. Output power exceeding 100 μW was obtained for each DBR laser. The propagation loss of the waveguide coupler was about 16 dB for inner ports and 20 dB for outer ports with a 6-dB splitting loss

Keywords

distributed Bragg reflector lasers; integrated optics; laser transitions; optical couplers; optical losses; quantum well lasers; refractive index; semiconductor growth; semiconductor laser arrays; vapour phase epitaxial growth; 100 muW; 1548.0 nm; 1553.5 nm; 16 dB; 20 dB; 6 dB; DBR waveguides; distributed Bragg reflector waveguides; effective refractive index; four-wavelength DBR laser array; inner ports; integrated multiwavelength lasers; lasing wavelength; outer ports; output power; propagation loss; selective MOVPE growth; selective metalorganic vapor-phase epitaxy; splitting loss; waveguide-couplers; Couplers; Distributed Bragg reflectors; Epitaxial growth; Epitaxial layers; Optical arrays; Power generation; Power lasers; Propagation losses; Refractive index; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522067

Filename

522067