DocumentCode
3132062
Title
InGaAs/InP MOS Single Photon Detector
Author
Kai Zhou ; Zhang, Arthur ; Kang, Yi-min ; Lo, Yu-Hwa
Author_Institution
Dept. of Phys., California Univ., San Diego, La Jolla, CA
fYear
2006
fDate
Oct. 2006
Firstpage
781
Lastpage
782
Abstract
The intrinsic advantage of negative feedback mechanism in InGaAs/InP based MOS-APDs for increased gain-bandwidth product is illustrated through simulation. Fabricated devices under dark conditions in Geiger mode demonstrate single photon sensitivity and suppressed intensity noise
Keywords
III-V semiconductors; MIS devices; avalanche photodiodes; gallium arsenide; indium compounds; photodetectors; Geiger mode; InGaAs-InP; InGaAs-InP MOS-APD; negative feedback; single photon detector; single photon sensitivity; Indium gallium arsenide; Indium phosphide; Negative feedback; Optical noise; Optical surface waves; Plasma applications; Plasma temperature; Semiconductor device noise; Surface treatment; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location
Montreal, Que.
Print_ISBN
0-7803-9555-7
Electronic_ISBN
0-7803-9555-7
Type
conf
DOI
10.1109/LEOS.2006.279000
Filename
4054417
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