Title :
InP-based MIR Avalanche Photodiodes: Current Status and Future Prospects
Author :
Holmes, Archie L.
Author_Institution :
Texas Univ., Austin, TX
Abstract :
Our research goal is to develop InP-based devices as an alternative to QWIPs and HgCdTe for MIR detection. The approach we have pursued for longer wavelength detection on InP is a type-II superlattice consisting of GaxIn1-xAs and GaAsySb 1-y alloys. These structures provide two advantages for MIR detection: large (greater than 700 meV) direct band-gaps, which should lead to a lower thermal carrier generation rate and the ability to adjust the detection wavelength by changing the compositions of GaInAs and GaAsSb and their thickness in the superlattice
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; gallium compounds; indium compounds; infrared detectors; photodetectors; semiconductor superlattices; GaxIn1-xAs; GaAsySb1-y; InP; InP-based MIR avalanche photodiode; band-gap; thermal carrier generation rate; type-II superlattice; Absorption; Avalanche photodiodes; Chemical industry; Chemical processes; Dark current; Detectors; Indium phosphide; PIN photodiodes; Superlattices; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279002
