Title :
Effect of annealing conditions on the uniformity of undoped semi-insulating InP
Author :
Kainosho, K. ; Ohta, M. ; Oda, O.
Author_Institution :
Electron. Mater. & Components Labs., Japan Energy Corp., Saitama, Japan
Abstract :
Undoped semi-insulating InP can be obtained by high-pressure annealing of high purity materials. The reproducibility was however not satisfactory. In the present work, we found that not only Fe concentrations but also Cr and Ni concentrations in annealed wafers were slightly increased. In order to reduce the contamination, conductive InP with a trace amount of Fe was annealed under low phosphorus vapor pressure. The minimum Fe concentration for realizing semi-insulating InP was found to be 1×1915 cm-3. It was also found that annealing conditions largely affect the resistivity uniformity of undoped semi-insulating InP
Keywords :
III-V semiconductors; annealing; electrical resistivity; impurity distribution; indium compounds; semiconductor technology; 910 to 950 degC; Cr concentrations; Fe concentrations; InP; InP:Fe,Cr,Ni; Ni concentrations; annealed wafers; annealing conditions; conductive InP; contamination; high purity materials; high-pressure annealing; low phosphorus vapor pressure; reproducibility; resistivity uniformity; undoped semi-insulating InP uniformity; Annealing; Chromium; Conductivity; Contamination; Impurities; Indium phosphide; Iron; Plasma temperature; Reproducibility of results; Zinc;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522070
