Title :
Excess Noise and Avalanche Multiplication in InAlAs
Author :
Goh, Y.L. ; Massey, D.J. ; Marshall, A.R.J. ; Ng, J.S. ; Tan, C.H. ; Hopkinson, M. ; David, J.P.R.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Sheffield
Abstract :
We present a systematic study of avalanche multiplication and excess noise characteristics of InAlAs on a series of p+-i-n + and n+-i-p+ diodes with nominal intrinsic region widths from 0.1mum to 2.5mum. The carrier threshold energies and the ionization coefficient for enabled carriers between electric fields of 220 ky/cm to 980 ky/cm are extracted by fitting to the measured electron- and hole-initiated multiplication and excess noise characteristics by using the coupled integral equations technique
Keywords :
III-V semiconductors; aluminium compounds; avalanche breakdown; avalanche photodiodes; indium compounds; p-i-n diodes; semiconductor device breakdown; semiconductor device noise; InAlAs; avalanche multiplication; carrier threshold energy; coupled integral equation; electron-initiated multiplication; excess noise characteristics; hole-initiated multiplication; ionization coefficient; n-i-p diodes; p-i-n diodes; Analytical models; Avalanche photodiodes; Charge carrier processes; Electrons; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Signal to noise ratio; Temperature dependence;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279003
