Title :
Iron segregation in LEC InP crystals
Author :
Fornari, R. ; Moriglioni, M. ; Thirumavalavan, M. ; Zappettini, A. ; Zuccalli, G.
Author_Institution :
MASPEC-CNR Inst., Parma, Italy
Abstract :
Following the recent results about activation of iron diffused in InP we tried to increase the fraction of electrically active Fe atoms in InP crystals grown by the liquid encapsulated Czochralski method (LEC) by applying a type of “in-situ” annealing. Actually, by varying the pulling rate and the cooling rate, we observed that the Fe active/Fetotal ratio can be modified. Though the ratio normally ranges between 0.60 and 0.70, it is found that the ratio is slighty higher corresponding to low pulling rates and considerably lower for pulling rates>14 mm/h. The purpose of this paper is to show how these growth parameters affect the Feactive/Fetotal ratio
Keywords :
III-V semiconductors; annealing; crystal growth from melt; diffusion; indium compounds; iron; segregation; semiconductor doping; semiconductor growth; Fe segregation; Feactive/Fetotal ratio; InP:Fe; LEC InP crystals; activation; cooling rate; diffused Fe; electrically active Fe atoms; growth parameters; in-situ annealing; liquid encapsulated Czochralski method; pulling rate; Annealing; Cooling; Crystals; Doping; Encapsulation; Indium phosphide; Iron; Semiconductivity; Semiconductor impurities; Solids;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522071
