Iron segregation in LEC InP crystals

Author

Fornari, R. ; Moriglioni, M. ; Thirumavalavan, M. ; Zappettini, A. ; Zuccalli, G.

Author_Institution

MASPEC-CNR Inst., Parma, Italy

fYear

1995

fDate

9-13 May 1995

Firstpage

41

Lastpage

44

Abstract

Following the recent results about activation of iron diffused in InP we tried to increase the fraction of electrically active Fe atoms in InP crystals grown by the liquid encapsulated Czochralski method (LEC) by applying a type of “in-situ” annealing. Actually, by varying the pulling rate and the cooling rate, we observed that the Fe _active/Fe_total ratio can be modified. Though the ratio normally ranges between 0.60 and 0.70, it is found that the ratio is slighty higher corresponding to low pulling rates and considerably lower for pulling rates>14 mm/h. The purpose of this paper is to show how these growth parameters affect the Fe_active/Fe_total ratio

Keywords

III-V semiconductors; annealing; crystal growth from melt; diffusion; indium compounds; iron; segregation; semiconductor doping; semiconductor growth; Fe segregation; Fe_active/Fe_total ratio; InP:Fe; LEC InP crystals; activation; cooling rate; diffused Fe; electrically active Fe atoms; growth parameters; in-situ annealing; liquid encapsulated Czochralski method; pulling rate; Annealing; Cooling; Crystals; Doping; Encapsulation; Indium phosphide; Iron; Semiconductivity; Semiconductor impurities; Solids;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522071

Filename

522071