Title :
Multicomponent zone melting growth of ternary InGaAs bulk crystal
Author :
Suzuki, T. ; Kusunoki, T. ; Katoh, T. ; Nakajima, K.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A 13 mm thick InxGa1-xAs crystal with n=0.14 has been successfully grown by a method of multicomponent zone melting growth. The alloy composition gradually changes along the growth direction, and this change is well explained by a temperature profile. A good uniformity in the alloy composition along the direction normal to the growth was also achieved
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor growth; temperature distribution; zone melting; 13 mm; InxGa1-xAs crystal; InGaAs; alloy composition; good uniformity; growth direction; multicomponent zone melting growth; temperature profile; ternary InGaAs bulk crystal; Chemical analysis; Cooling; Crystalline materials; Crystals; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum well lasers; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522072
