Crystal anomaly at the center of S doped InP wafers grown by the LEC method

Author

Iguchi, Y. ; Iwasaki, T. ; Yamabayashi, N.

Author_Institution

Optoelectronics R&D, Sumitomo Electr. Ind. Ltd., Osaka, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

49

Lastpage

52

Abstract

Crystal quality of 2" φ S doped InP wafers grown by the conventional liquid encapsulated Czochralski (LEC) method was studied by the photoluminescence (PL) mapping technique and the double crystal X-ray diffraction method. Crystal anomaly was found at the center of the wafer. The dark current distribution map of the InGaAs/InP PIN-photodiodes fabricated on the S doped InP substrate revealed that this crystal anomaly at the center increased the dark currents of the photodiodes

Keywords

III-V semiconductors; X-ray diffraction; crystal defects; crystal growth from melt; dark conductivity; indium compounds; p-i-n photodiodes; photoluminescence; semiconductor growth; sulphur; 2 in; InGaAs-InP; InGaAs/InP PIN-photodiodes; InP:S; LEC method; S doped InP substrate; S doped InP wafers; crystal anomaly; crystal quality; dark current distribution map; double crystal X-ray diffraction method; liquid encapsulated Czochralski method; photoluminescence mapping technique; Absorption; Dark current; Fabrication; Indium gallium arsenide; Indium phosphide; Light emitting diodes; Passivation; Photoluminescence; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522073

Filename

522073