Title :
A low-power and low-noise neural amplifier for all-diamond neural probes
Author :
Naeem, Ahmad ; Bazaz, Shafaat A. ; Aslam, Dean M.
Author_Institution :
Fac. of Electron. Eng., GIK Inst. of Eng. Sci. & Technol., Topi, Pakistan
Abstract :
A low-power, low-noise, front-end neural signal amplifier is designed for all-diamond neural recording probes. The neural amplifier provides a gain of 39.6 dB with a high cutoff frequency of 9.8 kHz. It effectively removes DC, with a real-time tunable low cutoff frequency between 10 Hz and 100 Hz. The consumed power is 51 μW with an input referred noise of 7.78 μVrms between 10 Hz and 10 kHz. The amplifier is designed in austriamicrosystems 0.35 μm double-poly, 4-metal, n-well CMOS process and consumes an area of 0.012 mm2 using 3.3 V power supplies.
Keywords :
CMOS integrated circuits; amplifiers; integrated circuit noise; neurophysiology; prosthetics; CMOS process; all-diamond neural probes; austriamicrosystems; frequency 10 Hz to 9.8 kHz; front-end neural signal amplifier; gain 39.6 dB; low noise neural amplifier; low power neural amplifier; power 51 muW; voltage 3.3 V; Cutoff frequency; Immune system; Logic gates; MOSFETs; Noise; Probes; Prosthetics; Low Noise; Low Power; Neural Amplifier; Neural Probes;
Conference_Titel :
Emerging Technologies (ICET), 2010 6th International Conference on
Conference_Location :
Islamabad
Print_ISBN :
978-1-4244-8057-9
DOI :
10.1109/ICET.2010.5638467
