Title :
Fabrication of a polarization insensitive electroabsorption modulator with strained InGaAs/InAlAs MQW by MOVPE
Author :
Kondo, Susumu ; Wakita, Kouichi ; Noguchi, Yoshio ; Yoshimoto, Naoto
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
Strained InGaAs/InAlAs multi-quantum well (MQW) layers are grown by a low pressure MOVPE. Introduction of compressive strain into an InAlAs barrier layer against a tensile strained well layer makes it possible to grow an MQW layer with good quality. By using these layers, we have also demonstrated strained InGaAs/InAlAs MQW electroabsorption modulators with a polarization insensitivity
Keywords :
III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; optical fabrication; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InAlAs barrier layer a; InGaAs-InAlAs; MOVPE; compressive strain; fabrication; good quality; low pressure MOVPE; multi-quantum well layers; polarization insensitive electroabsorption modulator; polarization insensitivity; strained InGaAs/InAlAs MQW; tensile strained well layer; Epitaxial growth; Epitaxial layers; Fabrication; Indium compounds; Indium gallium arsenide; Optical films; Optical modulation; Polarization; Quantum well devices; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522076
