• DocumentCode
    3132305
  • Title

    An efficient metrology to sense micro-metal contamination in fine-pitch package

  • Author

    Wang, Mu-Chun ; Yang, Hsiang-Lin ; Hsieh, Zhen-Ying ; Lin, Chen-Nan ; Chu, Chung-Ming ; Fan, Shou-Kong

  • fYear
    2009
  • fDate
    21-23 Oct. 2009
  • Firstpage
    648
  • Lastpage
    651
  • Abstract
    In the infant mortality (IM) experiment and the final test (FT) of IC reliability, the screening capability for the contaminated metal particles is generally over than the size, W × L ~ 120 × 120 um2. For the smaller size of these metal particles in ICs, the IM test is inferior. Using an efficient test metrology combining the IM test and the soak test to stress the sampled SRAM (Static random access memory) ICs, the smaller contaminated metal size with scanning electron microscope was measured, about W × L = 15 × 120 um2. The composition of metal particle with energy-dispersive X-ray (EDX) in material analysis exhibited two main peaks attributed to manganese (Mn) and ferrum (Fe). In speculation, the humidity effect after the soak test provided the electro-chemical reaction environment between two neighboring IC pins, spacing 130 um, in the fine pitch package. The IM test enhancing the electrical field accelerated this electro-chemical reaction. Therefore, even though the smaller contaminated metal particles exist, they with the double-combination test still can be screened out. Due to this effort, the risk selling ICs to customers is tremendously reduced. The assembly houses after information feedback are able to trace the root causes in production line and improve the package yield.
  • Keywords
    SRAM chips; X-ray chemical analysis; contamination; electrochemical analysis; integrated circuit manufacture; integrated circuit measurement; integrated circuit reliability; packaging; IC reliability; SRAM IC; electro-chemical reaction; energy-dispersive X-ray; fine-pitch package; infant mortality; material analysis; metrology; micro-metal contamination; production line; static random access memory; Contamination; Integrated circuit testing; Manganese; Metrology; Packaging; Pollution measurement; Random access memory; SRAM chips; Scanning electron microscopy; Stress measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology Conference, 2009. IMPACT 2009. 4th International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-4341-3
  • Electronic_ISBN
    978-1-4244-4342-0
  • Type

    conf

  • DOI
    10.1109/IMPACT.2009.5382269
  • Filename
    5382269