Title :
0.1-μm InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD
Author :
Enoki, Takatomo ; Ito, Hiroshi ; Ikuta, Kenji ; Ishii, Yasunobu
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
High-performance 0.1-μm-gate InAlAs/InGaAs HEMTs with an InP-recess-etch stopper grown by MOCVD have been developed, and it has been found that the InP-recess-etch stopper does not degrade device performance and does improve the uniformity of the threshold voltage and the designability of the device structure. InAlAs/InGaAs HEMTs on an InP substrate are thus applicable to ultra-high-speed digital ICs for future communication systems
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor growth; vapour phase epitaxial growth; 0.1 mum; 189 GHz; 250 GHz; I-V characteristics; InAlAs/InGaAs HEMT; InP; InP substrate; InP-recess-etch stopper; MOCVD growth; communication systems; current gain cutoff frequency; designability; threshold voltage uniformity; ultra-high-speed digital ICs; Atomic layer deposition; Atomic measurements; Contact resistance; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MOCVD; MODFETs; Molecular beam epitaxial growth;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522081
