A technology for monolithic integration of high-indium-fraction resonant-tunneling diodes with commercial MESFET VLSI electronics

Author

Aggarwal, R.J. ; Shenoy, K.V. ; Fonstad, C.G., Jr.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

85

Lastpage

88

Abstract

A novel epitaxy-on-electronics (EoE) technology, developed at MIT, allows the integration of III-V heterostructures and commercial VLSI GaAs circuits. We have designed a monolithic resonant-tunneling diode (RTD) based static random access memory which uses this technique. We review both the EoE process and the design and epitaxial growth techniques for high performance In_xGa_1-xAs/AlAs RTDs suitable for memories

Keywords

III-V semiconductors; MESFET integrated circuits; SRAM chips; VLSI; aluminium compounds; field effect memory circuits; gallium arsenide; indium compounds; integrated circuit design; resonant tunnelling diodes; semiconductor growth; vapour phase epitaxial growth; 1-bit memory cell; GaAs; I-V characteristics; III-V heterostructures; InGaAs-AlAs; MESFET VLSI electronics; VLSI GaAs circuits; design techniques; epitaxial growth; epitaxy-on-electronics technology; high performance In_xGa_1-xAs/AlAs RTDs; monolithic integration; resonant-tunneling diodes; static random access memory; Dielectric materials; Diodes; Gallium arsenide; Integrated circuit technology; Monolithic integrated circuits; Random access memory; Resonant tunneling devices; Temperature; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522082

Filename

522082