Title :
Photoconductivity and photoluminescence of Cu diffused p-InP
Author :
Pal, D. ; Bose, D.N.
Author_Institution :
Mater. Sci. Centre, Indian Inst. of Technol., Kharagpur, India
Abstract :
Photoconductivity and photoluminescence measurements were carried out on Cu diffused p-InP in the temperature range 70 K-350 K and 10 K-140 K respectively. With 35 mW/cm2 He-Ne laser radiation a high value of Iph/Id=2.6J105 was obtained at 200 K which decreased to 800 at 300 K. The Cu related emission band was obtained at 1.216 eV. From the line-shape and line-width analysis of the emission spectrum the vibrational energy for the ground and excited states were found to be 38 and 14 meV respectively. The configuration co-ordinate diagram of the defect was calculated which showed a small lattice relaxation
Keywords :
III-V semiconductors; copper; excited states; ground states; impurity states; indium compounds; photoconductivity; photoluminescence; spectral line breadth; 1.216 eV; 10 to 140 K; 14 meV; 38 meV; 70 to 350 K; Cu diffused p-InP; Cu related emission band; He-Ne; He-Ne laser radiation; InP:Cu; configuration co-ordinate diagram; emission spectrum; excited states; ground states; line-shape analysis; line-width analysis; photoconductivity; photoluminescence; small lattice relaxation; vibrational energy; Argon; Conductivity; Copper; Indium phosphide; Laser theory; Materials science and technology; Photoconducting materials; Photoconductivity; Photoluminescence; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522089
