Raman scattering study of the clustering phenomena in InGaAsP grown by LPE on (100) and (111) GaAs

Author

Sugiura, Touko ; Hase, Nobuyasu ; Hiramatsu, Kazumasa ; Sawaki, Nobuhiko

Author_Institution

Dept. of Electr. Eng., Toyota Coll. of Technol., Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

115

Lastpage

118

Abstract

In order to investigate the short range ordering, the asymmetric broadening of the Raman spectra of InGaAsP grown on GaAs substrate has been studied with the spatial correlation model. The broadening phenomena was found to be enhanced in the region of immiscibility, in agreement with the photoluminescence observation. But, in Raman measurements, the clustering effect has been found to occur even out of the miscibility gap. The effect is more enhanced in samples grown on (100) substrate than in samples grown on (111)A substrate. This shows that the stabilization of the growth due to the strain has also had a role to restrict the formation of the clustering in the growth process

Keywords

III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; short-range order; spectral line broadening; (100) substrate; (111) GaAs; GaAs; GaAs substrate; InGaAsP; LPE; Raman scattering study; asymmetric broadening; clustering phenomena; growth stabilization; immiscibility; miscibility gap; photoluminescence; spatial correlation model; strain; Educational institutions; Fluctuations; Gallium arsenide; Lattices; Optoelectronic devices; Phonons; Photoluminescence; Raman scattering; Substrates; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522090

Filename

522090