Title :
Raman scattering study of the clustering phenomena in InGaAsP grown by LPE on (100) and (111) GaAs
Author :
Sugiura, Touko ; Hase, Nobuyasu ; Hiramatsu, Kazumasa ; Sawaki, Nobuhiko
Author_Institution :
Dept. of Electr. Eng., Toyota Coll. of Technol., Japan
Abstract :
In order to investigate the short range ordering, the asymmetric broadening of the Raman spectra of InGaAsP grown on GaAs substrate has been studied with the spatial correlation model. The broadening phenomena was found to be enhanced in the region of immiscibility, in agreement with the photoluminescence observation. But, in Raman measurements, the clustering effect has been found to occur even out of the miscibility gap. The effect is more enhanced in samples grown on (100) substrate than in samples grown on (111)A substrate. This shows that the stabilization of the growth due to the strain has also had a role to restrict the formation of the clustering in the growth process
Keywords :
III-V semiconductors; Raman spectra; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; short-range order; spectral line broadening; (100) substrate; (111) GaAs; GaAs; GaAs substrate; InGaAsP; LPE; Raman scattering study; asymmetric broadening; clustering phenomena; growth stabilization; immiscibility; miscibility gap; photoluminescence; spatial correlation model; strain; Educational institutions; Fluctuations; Gallium arsenide; Lattices; Optoelectronic devices; Phonons; Photoluminescence; Raman scattering; Substrates; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522090
