Title :
Highly controlled InGaAs(P)/InP MQW interfaces grown by MOVPE using TBA and TBP precursors
Author :
Nakamura, T. ; Ae, S. ; Terakado, T. ; Torikai, T. ; Uji, T.
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
Abstract :
Reports that abrupt InGaAs/InP MQW interfaces are realized over 2-inch wafers by employing tertiarybutylarsine (TEA) and tertiarybutylphosphine (TBP) in place of AsH3 and PH3 , owing to elimination of the arsenic contamination into the InP layer after InGaAs growth and suppression of the As-P exchange reaction at the interfaces
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; interface structure; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 2 in; 2-inch wafers; As-P exchange reaction; InGaAs growth; InGaAs-InP; InGaAsP-InP; InP layer; MOVPE; TBA precursors; TBP precursors; abrupt InGaAs/InP MQW interfaces; epilayers; highly controlled InGaAs(P)/InP MQW interfaces; tertiarybutylarsine; tertiarybutylphosphine; Ash; Contamination; DH-HEMTs; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Indium phosphide; Pollution measurement; Quantum well devices; X-ray diffraction;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522091
