Title :
Metalorganic vapour phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)
Author :
Protzmann, H. ; Spika, Z. ; Spill, B. ; Zimmermann, G. ; Stolz, W. ; Gobel, E.O. ; Gimmnich, P. ; Lorberth, J.
Author_Institution :
Mater. Sci. Center, Philipps-Univ., Marburg, Germany
Abstract :
A variety of monoalkyl, dialkyl as well as trialkyl P-compounds, containing ethyl, isopropyl, and tertiarybutyl rest groups have been synthesized and used for the growth of InP bulk epitaxial layers by low pressure metalorganic vapour phase epitaxy. Almost uncompensated, n-type InP-layers (1.0·1015 cm-3 59600 cm-2 V-1 s-1 at 77 K) are realized using the not specifically purified precursor ditertiarybutyl phosphine ((C4H9)2-P-H, DitBuPH) in combination with commercial TMIn. Layer quality has been investigated by means of optical and scanning electron microscopy (SEM), temperature-dependent van der Pauw-Hall as well as photoluminescence (PL) measurements. All results are compared with those obtained by using PH3 as P-source
Keywords :
Hall effect; III-V semiconductors; indium compounds; optical microscopy; photoluminescence; scanning electron microscopy; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; DitBuPH; InP; InP bulk epitaxial layers; SEM; almost uncompensated n-type InP-layers; commercial TMIn; dialkyl P-compounds; ditertiarybutyl phosphine; ethyl rest groups; isopropyl rest groups; layer quality; low pressure metalorganic vapour phase epitaxy; metalorganic vapour phase epitaxy; monoalkyl P-compounds; novel P-source; optical microscopy; photoluminescence; precursor; scanning electron microscopy; temperature-dependent van der Pauw-Hall measurement; tertiarybutyl rest groups; trialkyl P-compounds; Electron optics; Epitaxial growth; Indium phosphide; Inductors; Laser excitation; Morphology; Optical microscopy; Physics; Scanning electron microscopy; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522092
