Highly efficient low temperature growth of GaInP in a planetary MOVPE system using tertiarybutylphosphine (TBP)

Author

Beccard, R. ; Knauf, J. ; Lengeling, G. ; Schmitz, D. ; JÜrgensen, H.

Author_Institution

Aixtron GmbH, Aachen, Germany

fYear

1995

fDate

9-13 May 1995

Firstpage

126

Lastpage

129

Abstract

We describe the use of tertiarybutylphosphine (TBP) as a group V precursor for the growth of GaInP. Growth has been carried out of in a multiwafer MOVPE Planetary Reactor. The results demonstrate that very low growth temperatures together with low V/III ratios can be used. The growth efficiency of this gas is very high compared to the standard group V precursor phosphine. Characterization of the GaInP layers by DCXD, photoluminescence and Hall measurements reveal their excellent crystalline, electrical and optical properties

Keywords

Hall effect; III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; DCXD; GaInP; Hall measurements re; crystalline properties; electrical properties; gas; group V precursor; growth efficiency; highly efficient low temperature growth; low V/III ratios; multiwafer MOVPE Planetary Reactor; optical properties; photoluminescence; planetary MOVPE system; tertiarybutylphosphine; very low growth temperatures; Crystalline materials; Electric variables measurement; Epitaxial growth; Epitaxial layers; Extraterrestrial measurements; Inductors; Optical films; Optical materials; Photoluminescence; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522093

Filename

522093