Title :
Highly efficient low temperature growth of GaInP in a planetary MOVPE system using tertiarybutylphosphine (TBP)
Author :
Beccard, R. ; Knauf, J. ; Lengeling, G. ; Schmitz, D. ; JÜrgensen, H.
Author_Institution :
Aixtron GmbH, Aachen, Germany
Abstract :
We describe the use of tertiarybutylphosphine (TBP) as a group V precursor for the growth of GaInP. Growth has been carried out of in a multiwafer MOVPE Planetary Reactor. The results demonstrate that very low growth temperatures together with low V/III ratios can be used. The growth efficiency of this gas is very high compared to the standard group V precursor phosphine. Characterization of the GaInP layers by DCXD, photoluminescence and Hall measurements reveal their excellent crystalline, electrical and optical properties
Keywords :
Hall effect; III-V semiconductors; X-ray diffraction; gallium compounds; indium compounds; photoluminescence; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; DCXD; GaInP; Hall measurements re; crystalline properties; electrical properties; gas; group V precursor; growth efficiency; highly efficient low temperature growth; low V/III ratios; multiwafer MOVPE Planetary Reactor; optical properties; photoluminescence; planetary MOVPE system; tertiarybutylphosphine; very low growth temperatures; Crystalline materials; Electric variables measurement; Epitaxial growth; Epitaxial layers; Extraterrestrial measurements; Inductors; Optical films; Optical materials; Photoluminescence; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522093
