DocumentCode :
3132602
Title :
Oscillator phase-noise reduction using low-noise high-Q active resonators
Author :
Nick, Mostafa ; Mortazawi, Amir
Author_Institution :
University of Michigan, Ann Arbor, United States
fYear :
2010
fDate :
23-28 May 2010
Firstpage :
1
Lastpage :
1
Abstract :
This paper describes a method for the design of a low phase-noise planar oscillator based on a compact low-noise active elliptic filter for its frequency stabilization. The phase-noise of the oscillator is significantly reduced by taking advantage of the high frequency-selectivity and low-noise characteristics of the active filter. The filter occupies a relatively small area due to its two-pole dual-mode structure, making it suitable for the fabrication of very compact low phase-noise oscillators. As a proof of concept, a X-band oscillator using a packaged SiGe HBT transistor is designed and tested. The oscillator, operating at 8.1 GHz, achieves a measured phase-noise of −150 dBc/Hz at 1 MHz frequency offset with 10 dBm output power. To the best of our knowledge, the oscillator demonstrated in this paper presents the lowest phase-noise among published planar oscillators, to date
Keywords :
Active filters; Design methodology; Fabrication; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Oscillators; Packaging; Resonator filters; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International
Conference_Location :
Anaheim, CA
ISSN :
0149-645X
Print_ISBN :
978-1-4244-6056-4
Electronic_ISBN :
0149-645X
Type :
conf
DOI :
10.1109/MWSYM.2010.5517019
Filename :
5517019
Link To Document :
بازگشت