A novel technique for semi-insulating InP(Fe) by chloride VPE

Author

Hongbo, Sun ; Songyan, Chen ; Yudong, Li ; Lizhong, Hu ; Shiyong, Liu

Author_Institution

State Key Lab. on Integrated Optoelectronics, Jilin Univ., Changchun, China

fYear

1995

fDate

9-13 May 1995

Firstpage

155

Lastpage

156

Abstract

The chloride vapor phase epitaxial (VPE) growth of semi-insulating (SI)InP (Fe) using N₂+H₂ as a carrier gas is reported for the first time. Iron doping is achieved by using FeCl₂ generated by reaction of HCl and Fe. The transport of iron as FeCl₂ is greatly improved by the use of N₂. A proper N₂/H₂ ratio for the iron incorporation is discussed and a high valve of 5×10⁸ Ωcm is obtained. Specifically, the technique has been successfully applied to the preparation of multi-quantum-well (MQW) laser diodes

Keywords

III-V semiconductors; indium compounds; iron; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; HCl-Fe; HCl-Fe reaction; InP:Fe; MQW laser diodes; N₂-H₂; N₂-H₂ carrier gas; chloride VPE; chloride vapor phase epitaxial growth; multi-quantum-well laser diodes; semi-insulating InP(Fe); Conductivity; Diode lasers; Doping; Fluid flow; Hydrogen; Indium phosphide; Integrated optoelectronics; Iron; Quantum well devices; Valves;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522101

Filename

522101