Title :
Composition control in the growth of AlAs1-xSbx alloys
Author :
Ou, Jehn ; Chen, Wei-Kuo
Author_Institution :
Dept. of Electrophys., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The deposition of AlAs1-xSbx films is studied systematically using a metalorganic vapor-phase epitaxy technique. The composition of the alloys was found to be dependent strongly on the growth temperature. A high concentration of solid Sb can be achieved at an elevated temperature. It is interesting to note that for films grown at 600°C the AlAs content in AlAsSb is determined simply by the input gas ratio of [TBAs]/[TMAl] as the Sb reactant is supplied sufficiently. Owing to the insensitivity of Sb mole flow rate to solid composition at this particular growth environment, this result could be accounted for by thermodynamic arguments. Following this picture, an improved film controllability can be achieved for the growth of AlAs1-xSbx compounds
Keywords :
III-V semiconductors; aluminium compounds; chemical variables control; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 600 degC; AlAs1-xSbx alloys; AlAsSb; Sb mole flow rate; Sb reactant; composition control; deposition; elevated temperature; film controllability; growth; growth environment; growth temperature; input gas ratio; metalorganic vapor-phase epitaxy technique; solid Sb high concentration; solid composition; thermodynamic arguments; Solids; Temperature dependence; Thermodynamics; Tin alloys;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522102
