A fully monolithic integrated twin dipole antenna mixer on a GaAs substrate

Author

Deng, K.L. ; Meng, C.C. ; Lu, S.S. ; Lee, H.D. ; Wang, H.

Author_Institution

Coll. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2000

fDate

2000

Firstpage

54

Lastpage

57

Abstract

The first fully monolithic X-band twin-dipole antenna mixer consisting of a uni-planar twin-dipole antenna and a GaAs MESFET single gate mixer on the same GaAs substrate fabricated by monolithic microwave integrated circuit technology (MMIC) is reported. The total chip size is 5×5 mm². This circuit received an RF signal of 10 GHz and down- converted it to an IF signal of 1 GHz with a worse case conversion loss of 22 dB, defined as the ratio of output IF power dissipated in a 50 Ω load to the RF available power received by the twin-dipole antenna. The experimental results demonstrate that this topology has potential applications in future low-cost millimeter-wave receivers for smart munitions seekers and automotive-collision-avoidance radars

Keywords

MESFET integrated circuits; MMIC mixers; active antennas; antenna radiation patterns; dipole antennas; field effect MMIC; gallium arsenide; microstrip antennas; 1 GHz; 10 GHz; 22 dB; GaAs; GaAs MESFET single gate mixer; GaAs substrate; MMIC technology; X-band; automotive-collision-avoidance radars; low-cost MM-wave receivers; millimeter-wave receivers; monolithic integrated twin dipole antenna mixer; monolithic microwave IC technology; smart munitions seekers; uni-planar twin-dipole antenna; Dipole antennas; Gallium arsenide; Integrated circuit technology; Loaded antennas; MESFET integrated circuits; MMICs; Microwave antennas; RF signals; Radio frequency; Receiving antennas;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925717

Filename

925717