Device performance improvement with Nitrogen implanted during LDD sequence

As CMOS gate dimension scale down, control of lateral and vertical diffusion of dopants is required to enhance performance. In this work, device performance with nitrogen implanted in the region between LDD and pocket was investigated. During annealing, N diffuses quickly towards the interface oxide/silicon. The mechanism of N diffusion by interstitial inhibit boron diffusion. By assuming that small amount of B segregates to the interface, simulation have shown that interface states are neutralized by N trapped at the interface oxide/silicon and can improve on state current.