Title :
Dual-Pearson Parameter Extraction for In Tilt Implantation
Author :
Shibahara, Kentaro ; Eto, Takanori ; Fukunaga, Tetuya
Author_Institution :
Hiroshima Univ., Hiroshima
Abstract :
Indium depth profiles were obtained for various energies and tilt angles to provide precise dual Pearson parameter data set. Dual Pearson model can reproduce an In profile with channeling tail. The obtained data set is available with commercial TCAD tools.
Keywords :
doping profiles; elemental semiconductors; indium; ion implantation; parameter estimation; semiconductor doping; silicon; In tilt implantation; Si:In - Binary; channeling; doping profiles; dual-Pearson parameter extraction; implantation energy; indium depth profiles; ion implantation; tilt angle; Crystallization; Data mining; Indium; Ion implantation; Nuclear electronics; Parameter extraction; Probability distribution; Semiconductor device modeling; Semiconductor process modeling; Tail;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279938
