Title :
Dopant Activation and Leakage Current Aspects of SDE/Halo CMOS Junctions Measured with Non-contact Junction Photo-Voltage Methods
Author :
Current, Michael ; Faifer, Vladimir ; Halim, J. ; Ohno, Naotsugu
Author_Institution :
Frontier Semicond., San Jose
Abstract :
The thin depletion layers and high leakage currents for shallow SDE/halo profiles rule out the continued use of direct contact sheet resistance probes. Non-contact probes based on junction photo-voltage (JPV) measurements provide accurate sheet resistance, Rs, values as well as quantitative evaluation of process-related aspects of junction leakage current. These combined JPV methods are referred to as "RsL" probes.
Keywords :
CMOS integrated circuits; doping profiles; leakage currents; semiconductor doping; semiconductor junctions; voltage measurement; SDE/halo CMOS junctions; Si; Si - Interface; dopant activation; junction leakage current; noncontact junction photovoltage methods; noncontact probes; shallow SDE/halo profiles; sheet resistance; source/drain extension junction; thin depletion layers; Annealing; Area measurement; Current measurement; Electrical resistance measurement; Electrodes; Frequency modulation; Leakage current; Optical modulation; P-n junctions; Probes;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279942
