Title :
Thermal cleaning and growth temperature effects on deep levels of Be-doped p-InAlAs grown on InP by molecular beam epitaxy
Author :
Tanaka, Shigehisa ; Matsuoka, Yasunobu ; Nakamura, Hitoshi
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
In this work, we study deep levels in Be-doped p-InAlAs grown by MBE by using the conventional deep level transient spectroscopy (DLTS) method. Based on how the deep levels are affected by growth conditions, optimal MBE growth conditions to obtain a high quality InAlAs layer are determined
Keywords :
III-V semiconductors; aluminium compounds; beryllium; deep level transient spectroscopy; impurity states; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor technology; surface cleaning; Be-doped p-InAlAs; DLTS; InAlAs:Be; InP; MBE; deep level transient spectroscopy; deep levels; growth conditions; growth temperature effects; high quality InAlAs layer; molecular beam epitaxy; optimal MBE growth conditions; thermal cleaning; Cleaning; Diodes; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Substrates; Surface reconstruction; Temperature dependence; Temperature distribution;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522113
