Thermal cleaning and growth temperature effects on deep levels of Be-doped p-InAlAs grown on InP by molecular beam epitaxy

Author

Tanaka, Shigehisa ; Matsuoka, Yasunobu ; Nakamura, Hitoshi

Author_Institution

Central Res. Lab., Hitachi Ltd., Tokyo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

198

Lastpage

201

Abstract

In this work, we study deep levels in Be-doped p-InAlAs grown by MBE by using the conventional deep level transient spectroscopy (DLTS) method. Based on how the deep levels are affected by growth conditions, optimal MBE growth conditions to obtain a high quality InAlAs layer are determined

Keywords

III-V semiconductors; aluminium compounds; beryllium; deep level transient spectroscopy; impurity states; indium compounds; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; semiconductor technology; surface cleaning; Be-doped p-InAlAs; DLTS; InAlAs:Be; InP; MBE; deep level transient spectroscopy; deep levels; growth conditions; growth temperature effects; high quality InAlAs layer; molecular beam epitaxy; optimal MBE growth conditions; thermal cleaning; Cleaning; Diodes; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Substrates; Surface reconstruction; Temperature dependence; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522113

Filename

522113