Title :
Determination of Activated Dopant Profiles with a Novel FastGate® Probe
Author :
Hillard, Robert J. ; Ye, C.Win ; Benjamin, Mark C. ; Suguro, Kyoichi
Author_Institution :
Solid State Meas. Inc., Pittsburgh
Abstract :
A novel technique has been developed that can provide activated dopant profiling of USJ structures without complicated Poisson based corrections. The technique has been demonstrated on USJ layers as thin as 25 nm. The value of this measurement technique is that it removes any consideration of mobility variation and allows one to focus on the electrically activated dopant. As the shape of the profile can affect device performance, this measurement will allow for optimal process development.
Keywords :
doping profiles; probes; semiconductor junctions; FastGate probe; USJ structures; activated dopant profiles; electrically activated dopant; mobility variation; optimal process development; size 25 nm; source-drain extensions; ultra-shallow junctions; Annealing; Capacitance-voltage characteristics; Charge carrier density; Contacts; Electrical resistance measurement; MOSFETs; Probes; Shape; Solid state circuits; Testing;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279943
