Title :
Investigation of a molecular beam epitaxy regrowth procedure using an in-situ H2 plasma probed with an InP/InGaAs/InP quantum well
Author :
Drouot, V. ; Robinson, B.J. ; Thompson, D.A. ; Bru, C. ; Benyattou, T. ; Guillot, G.
Author_Institution :
Centre for Electrophotonic Mater. & Devices, McMaster Univ., Hamilton, Ont., Canada
Abstract :
In this work, we use a single InGaAs quantum well structure to investigate the effect of a bias potential applied to the substrate during the H-plasma exposure and of annealing performed after the H treatment for growth on InP surfaces. Assessment of the optical quality of the regrowth interface has been achieved by photoluminescence (PL) measurements at 300 and 11 K and photoluminescence excitation spectroscopy (PLE) at 11 K
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; interface structure; molecular beam epitaxial growth; photoluminescence; semiconductor growth; semiconductor quantum wells; surface treatment; 11 K; 300 K; H treatment; H-plasma exposure; H2; InP; InP surfaces; InP-InGaAs-InP; InP/InGaAs/InP quantum well; MBE; annealing; bias potential; in-situ H2 plasma; molecular beam epitaxy regrowth procedure; optical quality; photoluminescence; photoluminescence excitation spectroscopy; regrowth interface; single InGaAs quantum well structure; Buffer layers; Hydrogen; Indium gallium arsenide; Indium phosphide; Molecular beam epitaxial growth; Plasma applications; Plasma devices; Plasma temperature; Rough surfaces; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522114
